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S70GL02GS 2 gbit (256 mbytes), 3.0 v flash memory cypress semiconductor corporation ? 198 champion court ? san jose , ca 95134-1709 ? 408-943-2600 document number: 001-98296 rev. *j revised august 09, 2017 general description the cypress S70GL02GS 2-gigabit mirrorbit ? flash memory device is fabr icated on 65 nm mirrorbit eclipse process technology. this device offers a fast page access time of 25 ns with a corresp onding random access time of 110 ns . it features a write buffer th at allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard single byte/word programming algorithms. this makes th e device an ideal product for today?s embedded applications that require higher density, better performance and lower power consumption. this document contains information for the S70GL02GS device, wh ich is a dual die stack of two s29gl01gs die. for detailed specifications, please refer to the discrete die datasheet. distinctive characteristics ? cmos 3.0 volt core with versatile i/o? ? two 1024 megabit (s29gl01gs) in a single 64-ball fortified-bga package (see s29gl01gs datasheet for full specifications) ? 65 nm mirrorbit eclipse? process technology ? single supply (v cc ) for read / program / erase (2.7v to 3.6v) ? versatile i/o feature ? wide i/o voltage (vio): 1.65v to v cc ? x16 data bus ? 16-word/32-byte page read buffer ? 512-byte programming buffer ? programming in page multiples, up to a maximum of 512 bytes ? sector erase ? uniform 128-kbytes sectors ? S70GL02GS: two thousand forty-eight sectors ? suspend and resume commands for program and erase operations ? status register, data polling, and ready/busy pin methods to determine device status ? advanced sector protection (asp) ? volatile and non-volatile protection methods for each sector ? separate 1024-bye one time pr ogram (otp) array with two lockable regions ? available in each device support for cfi (common flash interface) ? wp# input ? protects first or last sector, or first and last sectors of each device, regardless of sector protection settings ? industrial temperature range ( ? 40c to +85c) ? automotive aec-q100 grade 3 ( ? 40c to +85c) ? automotive aec-q100 grade 2 ( ? 40c to +105c) ? 100,000 erase cycles per sector typical ? 20-year data retention typical ? packaging options ? 64-ball lsh fortified bga, 13 mm ? 11 mm document cypress document number s29gl01gs datasheet 001-98285
document number: 001-98296 rev. *j page 2 of 19 S70GL02GS performance characteristics notes 1. access times are dependent on v io operating ranges. see ordering information on page 4 for further details. 2. contact a sales representative for availability. max. read access times (ns) (note 1) parameter 2 gb random access time (t acc ) 110 120 page access time (t pacc )2030 ce# access time (t ce ) 110 120 oe# access time (t oe )2535 typical program and erase rates buffer programming (512 bytes) 1.5 mb/s sector erase (128 kbytes) 477 kb/s maximum current consumption active read at 5 mhz, 30 pf 60 ma program 100 ma erase 100 ma standby 200 a
document number: 001-98296 rev. *j page 3 of 19 S70GL02GS contents 1. ordering information .................................................... 4 1.1 recommended combinations ................................ 4 2. input/output descriptions and logic symbol ............ 6 3. block diagrams ............................................................. 7 3.1 special handling instructions for bga package .... 9 3.2 lsh064?64 ball fortified ball grid array, 13 x 11 mm........................................................... 10 4. memory map ................................................................ 11 5. second die access ..................................................... 11 6. autoselect .................................................................... 11 7. dc characteristics ...................................................... 12 8. bga package capacitance ........................................ 13 9. device id and common flash interface (id-cfi) aso map ........................................................ 13 10. document history ....................................................... 18 sales, solutions, and legal information ........................... 19 worldwide sales and design supp ort ............ ........... ..... 19 products ......................................................................... 19 psoc? solutions ........................................................... 19 cypress developer community ...................................... 19 technical support ................... ....................................... 19
document number: 001-98296 rev. *j page 4 of 19 S70GL02GS 1. ordering information 1.1 recommended combinations recommended combinations table below list various configurat ions planned to be available in volume. the table below will be updated as new combinations are released. check with your loca l sales representative to confirm availability of specific configuration not listed or to check on newly released combinations. notes 1. bga package marking omits leading ?s70? and packing type designator from ordering part number. 2. packing type ?0? is standard option. the table below lists configurations that are automotive grade / aec-q100 qualified and are planned to be available in volume. the table will be updated as new combinations are released. consult your local sales representative to confirm availability of spec ific combinations and to check on newly released combinations. production part approval process (ppap) suppor t is only provided for aec-q100 grade products. products to be used in end-use applications that require iso/ts-16949 compliance must be aec-q100 grade products in combination with ppap. non?aec-q100 grade products are no t manufactured or documented in full compliance with iso/ts-16949 requirements. aec-q100 grade products are also offered without ppap suppor t for end-use applications that do not require iso/ts-16949 compliance. s29gl-s valid combinations base opn speed (ns) package and temperature model number packing type ordering part number (yy = model number, x = packing type) S70GL02GS 110 fhi, fhv (note 1) 01, 02 0, 3 (note 2) S70GL02GS11fhi01x S70GL02GS11fhi02x S70GL02GS11fhv01x S70GL02GS11fhv02x 120 v1, v2 S70GL02GS12fhiv1x S70GL02GS12fhiv2x S70GL02GS12fhvv1x S70GL02GS12fhvv2x valid combinations ? automotive grade / aec-q100 base opn speed (ns) package and temperature model number packing type ordering part number (yy = model number, x = packing type) S70GL02GS 110 fha, fhb (note 1) 01, 02 0, 3 (note 2) S70GL02GS11fha01x S70GL02GS11fha02x S70GL02GS11fhb01x S70GL02GS11fhb02x 120 v1, v2 S70GL02GS12fhav1x S70GL02GS12fhav2x S70GL02GS12fhbv1x S70GL02GS12fhbv2x
document number: 001-98296 rev. *j page 5 of 19 S70GL02GS the ordering part number is formed by a valid combination of the following: S70GL02GS 12 f h i 01 0 packing type 0 = tray (standard) 3 = 13? tape and reel model number (v io range, protection when wp# =v il ) 01 = v io = v cc = 2.7v to 3.6v, highest address sector protected 02 = v io = v cc = 2.7v to 3.6v, lowest address sector protected v1 = v io = 1.65v to v cc , v cc = 2.7v to 3.6v, highest address sector protected v2 = v io = 1.65v to v cc , v cc = 2.7v to 3.6v, lowest address sector protected temperature range i = industrial (?40c to +85c) a = automotive, aec-q100 grade 3 (?40c to +85c) b = automotive, aec-q100 grade 2 (?40c to +105c) v = automotive - in cabin (?40c to +105c) package materials set h = low halogen, pb-free package type f = fortified ball grid array, 1.0 mm pitch package (lsh064), 11 mm x 13 mm speed option 11 = 110 ns 12 = 120 ns device number/description S70GL02GS 3.0 volt-only, 2048 megabit (128m x 16-bit) page-mode flash memory manufactured on 65 nm mirr orbit eclipse process technology
document number: 001-98296 rev. *j page 6 of 19 S70GL02GS 2. input/output descrip tions and logic symbol table 1 identifies the input and output pack age connections provided on the device. table 1. input/output descriptions symbol type description a26?a0 input address lines for gl02gs. dq15?dq0 i/o data input/output. ce# input chip enable. oe# input output enable. we# input write enable. v cc supply device power supply. v io supply versatile io input. v ss supply ground. ry/by# output ready/busy. indicates whether an embedded algo rithm is in progress or complete. at v il , the device is actively erasing or programming. at high z, the device is in ready. reset# input hardware reset. low = device resets and retu rns to reading array data. wp# input write protect/accele ration input. at v il , disables program and erase functions in the outermost sectors. at v hh , accelerates programming; automatically places device in unlock bypass mode. should be at v ih for all other conditions. nc no connect not connected. no device internal signal is conn ected to the package connector nor is there any future plan to use the connector for a signal. the connection may safely be used for routing space for a signal on a printed circuit board (pcb). dnu reserved do not use. a device internal signal may be connected to the package connector. the connection may be used by cypress for test or ot her purposes and is not intended for connection to any host system signal. any dnu signal related function will be inactive when the signal is at v il . the signal has an internal pu ll-down resistor and may be left unconnected in the host system or may be tied to v ss . do not use these connections for pcb signal routing channels. do not connect any host system signal to these connections. rfu no connect reserved for future use. no device internal si gnal is currently connected to the package connector but there is potential fu ture use for the connector for a signal. it is recommended to not use rfu connectors for pcb routing channels so that the pcb may take advantage of future enhanced features in comp atible footprint devices.
document number: 001-98296 rev. *j page 7 of 19 S70GL02GS 3. block diagrams figure 1. block diagram for 2 x gl01gs (h ighest and lowest address sectors protected) figure 2. block diagram for 2 x gl01 gs (lowest address sector protected) a26 amax+1 ext vcc vcc a0 to a25 a0-a25 vccq vio vss vss ce# ce# 1 gb flash vssq (flash 1) oe# oe# we# we# amax+1 int reset# reset# dq0-15 dq0-15 wp# wp# ry/by# ry/by# amax+1 ext vcc a0-a25 vccq vss ce# vssq oe# we# amax+1 int reset# dq0-15 wp# ry/by# 1 gb flash (flash 2) a26 amax+1 ext vcc vcc a0 to a25 a0-a25 vccq vio vss vss ce# ce# vssq oe# oe# we# we# amax+1 int reset# reset# dq0-15 dq0-15 vio wp# ry/by# ry/by# amax+1 ext vcc a0-a25 vccq vss ce# vssq oe# we# amax+1 int reset# dq0-15 wp# wp# ry/by# 1 gb flash (flash 1) 1 gb flash (flash 2)
document number: 001-98296 rev. *j page 8 of 19 S70GL02GS figure 3. block diagram for 2 x gl01gs (highest address sector protected) a26 amax+1 ext vcc vcc a0 to a25 a0-a25 vccq vio vss vss ce# ce# 1 gb flash vssq (flash 1) oe# oe# we# we# amax+1 int reset# reset# dq0-15 dq0-15 wp# wp# ry/by# ry/by# amax+1 ext vcc a0-a25 vccq vss ce# vssq oe# we# amax+1 int reset# dq0-15 vio wp# ry/by# 1 gb flash (flash 2)
document number: 001-98296 rev. *j page 9 of 19 S70GL02GS 3.1 special handling inst ructions for bga package special handling is required for flash memory products in bga packages. flash memory devices in bga packages may be damaged if exposed to ultrasonic cleaning methods. the package and/or data integrity may be compromised if the package body is exposed to temperatures above 150c for prolonged periods of time. figure 4. 64-ball fortified ball grid array notes 1. ball e1, do not use (dnu), a device internal signal is connec ted to the package connector. t he connector may be used by cypre ss for test or other purposes and is not intended for connection to any host system signal. do not us e these connections for pcb sign al routing channels. though not recommended, the ball can be connected to v cc or v ss through a series resistor. 2. balls f7 and g1, reserved for future use (rfu). 3. balls a1, a8, c1, d1, h1, and h8, no connect (nc). 64-ball fortified bga top view, balls facing down a2 c2 d2 e2 f2 g2 h2 a3 c3 d3 e3 f3 g3 h3 a4 c4 d4 e4 f4 g4 h4 a5 c5 d5 e5 f5 g5 h5 a6 c6 d6 e6 f6 g6 h6 a7 c7 d7 e7 f7 g7 h7 dq15 v ss rfu a16 a15 a14 a12 a13 dq13 dq6 dq14 dq7 a11 a10 a8 a9 v cc dq4 dq12 dq5 a19 a21 reset# we# dq11 dq3 dq10 dq2 a20 a18 wp# ry/by# dq9 dq1 dq8 dq0 a5 a6 a17 a7 oe# v ss ce# a0 a1 a2 a4 a3 a1 c1 d1 e1 f1 g1 h1 rfu nc v io dnu nc nc a26 nc a8 c8 b2 b3 b4 b5 b6 b7 b1 b8 d8 e8 f8 g8 h8 a25 nc a24 v ss v io a23 a22 nc
document number: 001-98296 rev. *j page 10 of 19 S70GL02GS 3.2 lsh064?64 ball fortified ba ll grid array, 13 x 11 mm figure 5. lsh064?64-ball fortified ball grid array (fbga), 13 x 11 mm g1005.2 \ f16-038.15 \ 08.10.10 notes: 1. dimensioning and tolerancing per asme y14.5m-1994. 2. all dimensions are in millimeters. 3. ball position designation per jep 95, section 4.3, spp-010. 4. e represents the solder ball grid pitch. 5. symbol "md" is the ball matrix size in the "d" direction. symbol "me" is the ball matrix size in the "e" direction. n is the number of populated solder ball positions for matrix size md x me. 6 dimension "b" is measured at the maximum ball diameter in a plane parallel to datum c. 7 sd and se are measured with respect to datums a and b and define the position of the center solder ball in the outer row. when there is an odd number of solder balls in the outer row sd or se = 0.000. when there is an even number of solder balls in the outer row, sd or se = e/2 8. ?+? indicates the theoretical center of depopulated balls. 9 a1 corner to be identified by chamfer, laser or ink mark, metallized mark indentation or other means. package lsh 064 jedec n/a d x e 13.00 mm x 11.00 mm package symbol min nom max note a --- --- 1.4 profile a1 0.40 --- --- ball height d 13.00 bsc body size e 11.00 bsc body size d1 7.00 bsc matrix footprint e1 7.00 bsc matrix footprint md 8 matrix size d direction me 8 matrix size e direction n 64 ball count ? b 0.50 0.60 0.70 ball diameter ee 1.00 bsc ball pitch ed 1.00 bsc ball pitch sd / se 0.50 bsc solder ball placement depopulated solder balls
document number: 001-98296 rev. *j page 11 of 19 S70GL02GS 4. memory map the S70GL02GS consist of uniform 64 kword (128-kbyte) sectors organized as shown in table 2 . note this table has been condensed to show sector-related information for an entire device on a single page. sectors and their addre ss ranges that are not explicitly listed (such as sa001-sa2046) have sector starting and ending addresses that form the same pattern as all other sectors of that size. for example, all 128 kb sectors have the pattern xxx0000h-xxxffffh. 5. second die access the S70GL02GS device is a dual die stack comprising two s29gl 01gs dies connected in parallel, but with only one chip select (cs#) signal. this means that each die receives commands in par allel. the low-address die accept s commands with a26 = 0, while the high-address die accepts commands with a 26 = 1. so, it is necessary to set the address bit a26 to ?1? while sending command s to access the second die of S70GL02GS. you can manage this by adding the base address for eac h die to each address argument for each command; the base address for first die is 0x0 and for th e second die is 0x4000000. the following table provides an example. no special address manipulation is required for reading the main flash array. while reading you cannot tell that there are two flash die - only that there is a continuous ad dress space that spans both flash chips. the special address manipulation is required for writing comm ands and receiving command response. many commands have "unlock cycles" consisting of the 555h/aah and 2aah/55h address/dat a pattern. for these cycles a26 must be set correctly, so th e unlock cycles are accepted by the intended flash die. some comma nds also have address arguments that must be di rected to the correct die via a26. these arguments are: r ead address (ra), program address (pa), sector address (sa), write buffer location (wbl), password address (pwa), don't care (xxx-for single die only) 6. autoselect table 4 provides the device identification codes for the S70GL02GS. for more information on the auto select function , refer to the s29gl-s data sheet (publication number s29gl_128s_01gs_00). table 2. S70GL02GS sector and memory address map uniform sector size sector count sector range address range (16-bit) notes 64 kword/128 kb 2048 sa00 0000000h?000ffffh sector starting address : : sa2047 7ff0000h?7ffffffh sector ending address table 3. second die access example command sequence to erase first sector in die 1 command sequence to erase first sector in die 2 1st unlock cycle address 0x555 / data 0xaa address 0x4000555 / data 0xaa 2nd unlock cycle address 0x 2aa / data 0x55 address 0x40002aa / data 0x55 1st command cycle address 0x555 / data 0x80 address 0x4000555 / data 0x80 2nd command cycle address 0x555 / data 0xaa address 0x4000555 / data 0xaa 3rd command cycle address 0x2aa / data 0x55 address 0x40002aa / data 0x55 sector address / sector erase command address 0x0000000 / data 0x30 address 0x4000000 / data 0x30 table 4. autoselect addresses in system description address read data (word/byte mode) manufacturer id (base) + 00h 0001h device id, word 1 (base) + 01h 227eh device id, word 2 (base) + 0eh 2248h
document number: 001-98296 rev. *j page 12 of 19 S70GL02GS 7. dc characteristics notes 1. i cc active while embedded algorithm is in progress. 2. not 100% tested. 3. automatic sleep mode enables the lower power mode when addresses remain stable for a designated time. 4. v io = 1.65v to v cc or 2.7v to v cc depending on the model. 5. v cc = 3v and v io = 3v or 1.8v. when v io is at 1.8v, i/o pins cannot operate at >1.8v. 6. during power-up there are spikes of current demand, the syste m needs to be able to supply this current to insure the part ini tializes correctly. 7. if an embedded operation is in progress at the start of reset, the current consumption will remain at the embedded operation specification until the embedded operation is stopped by the reset. if no embedded operation is in progress when reset is started, or following the stopping of an embedde d operation, i cc7 will be drawn during the remainder of t rph . after the end of t rph the device will go to standby mode until the next read or write. 8. the recommended pull-up resistor for ry/by# output is 5k to 10k ohms. 9. for all other dc current values, refer to the s29gl-128s_01gs_00 datasheet . device id, word 3 (base) + 0fh 2201h secure device verify (base) + 03h for S70GL02GS highest address sector protect: xx3fh = not factory locked xxbfh = factory locked for S70GL02GS lowest address sector protect: xx2fh = not factory locked xxafh = factory locked sector protect verify (sa) + 02h xx01h/01h = locked, xx00h/00h = unlocked table 5. dc characteristics parameter description test conditions min typ (note 2) max unit i li input load current v in = v ss to v cc , v cc = v cc max +0.04 2.0 a i lo output leakage current v out = v ss to v cc , v cc = v cc max +0.04 2.0 a i cc4 vcc standby current ce#, reset#, oe# = v ih , v ih = v io v il = v ss , v cc = v cc max 140 200 a i cc5 v cc reset current (notes 2 , 7 ) ce# = v ih , reset# = v il , v cc = v cc max 20 40 ma i cc6 automatic sleep mode (note 3) v ih = v io , v il = v ss , v cc = v cc max, t acc + 30 ns 612ma v ih = v io , v il = v ss , v cc = v cc max, t assb 200 300 a i cc7 v cc current during power up (notes 2 , 6 ) reset# = v io, ce# = v io , oe# = v io , v cc = v cc max, 106 160 ma table 4. autoselect addresses in system (continued) description address read data (word/byte mode)
document number: 001-98296 rev. *j page 13 of 19 S70GL02GS 8. bga package capacitance notes 1. sampled, not 100% tested. 2. test conditions ta = 25c, f = 1.0 mhz. 9. device id and common flash interface (id-cfi) aso map the device id portion of the aso (word locations 0h to 0fh) pr ovides manufacturer id, device id , sector protection state, and b asic feature set information for the device. id-cfi location 02h displays sector protection status for the se ctor selected by the sector address (sa) used in the id-cfi ent er command. to read the protection status of mo re than one sector it is necessary to ex it the id aso and enter the id aso using th e new sa. the access time to read location 02h is always t acc and a read of this location requires ce# to go high before the read and return low to initiate the read (asynchronous read access). page mode read between location 02h and other id locations is not supported. page mode read between id locations other than 02h is supported. parameter symbol parameter description typ max unit c in input capacitance 15 16 pf c out output capacitance 10 11 pf a26 highest order address 6 7 pf ce# separated control pin 12 13 pf oe# separated control pin 7 8 pf we# separated control pin 11 12 pf wp# separated control pin 11 12 pf reset# separated control pin 8 9 pf ry/by# separated control pin 5 6 pf table 6. id (autoselect) address map description address read data manufacture id (sa) + 0000h 0001h device id (sa) + 0001h 227eh protection verification (sa) + 0002h sector protection state (1= sector protected, 0= sector unprotected). this protection state is shown only for the sa selected when entering id-cfi aso. reading other sa provides undefined data. to read a different sa protection state aso exit command must be used and then enter id-cfi aso again with the new sa. indicator bits (sa) + 0003h for S70GL02GS highest address sector protect: xx3fh = not factory locked xxbfh = factory locked for S70GL02GS lowest address sector protect: xx2fh = not factory locked xxafh = factory locked dq15-dq08 = 1 (reserved) dq7 - factory locked secure silicon region 1 = locked 0 = not locked dq6 - customer locked secure silicon region 1 = locked 0 = not locked dq5 = 1 (reserved) dq4 - wp# protects 0 = lowest address sector 1 = highest address sector dq3 - dq0 = 1 (reserved)
document number: 001-98296 rev. *j page 14 of 19 S70GL02GS rfu (sa) + 0004h reserved (sa) + 0005h reserved (sa) + 0006h reserved (sa) + 0007h reserved (sa) + 0008h reserved (sa) + 0009h reserved (sa) + 000ah reserved (sa) + 000bh reserved lower software bits (sa) + 000ch bit 0 - status register support 1 = status register supported 0 = status register not supported bit 1 - dq polling support 1 = dq bits polling supported 0 = dq bits polling not supported bit 3-2 - command set support 11 = reserved 10 = reserved 01 = reduced command set 00 = classic command set bits 4-15 - reserved = 0 upper software bits (sa) + 000dh reserved device id (sa) + 000eh 2248h = 2 gb device id (sa) + 000fh 2201h table 7. cfi query identification string word address data description (sa) + 0010h (sa) + 0011h (sa) + 0012h 0051h 0052h 0059h query unique ascii string ?qry? (sa) + 0013h (sa) + 0014h 0002h 0000h primary oem command set (sa) + 0015h (sa) + 0016h 0040h 0000h address for primary extended table (sa) + 0017h (sa) + 0018h 0000h 0000h alternate oem command set (00h = none exists) (sa) + 0019h (sa) + 001ah 0000h 0000h address for alternate oem extended table (00h = none exists) table 6. id (autoselect) address map (continued) description address read data
document number: 001-98296 rev. *j page 15 of 19 S70GL02GS table 8. cfi system interface string word address data description (sa) + 001bh 0027h v cc min. (erase/program) (d7-d4: volts, d3-d0: 100 mv) (sa) + 001ch 0036h v cc max. (erase/program) (d7-d4: volts, d3-d0: 100 mv) (sa) + 001dh 0000h v pp min. voltage (00h = no v pp pin present) (sa) + 001eh 0000h v pp max. voltage (00h = no v pp pin present) (sa) + 001fh 0008h typical timeout per single word write 2 n s (sa) + 0020h 0009h typical timeout for max multi-byte program, 2 n s (00h = not supported) (sa) + 0021h 0008h typical timeout per individual block erase 2 n ms (sa) + 0022h 0013h (2 gb) typical timeout for full chip erase 2 n ms (00h = not supported) (sa) + 0023h 0001h max. timeout for single word write 2 n times typical (sa) + 0024h 0002h max. timeout for buffer write 2 n times typical (sa) + 0025h 0003h max. timeout per individual block erase 2 n times typical (sa) + 0026h 0003h max. timeout for full chip erase 2 n times typical (00h = not supported) table 9. cfi device geometry definition word address data description (sa) + 0027h 001ch (2 gb) device size = 2 n byte (sa) + 0028h 0001h flash device interface description 0 = x8-only, 1 = x16-only, 2 = x8/x16 capable (sa) + 0029h 0000h (sa) + 002ah 0009h max. number of byte in multi-byte write = 2 n (00 = not supported) (sa) + 002bh 0000h (sa) + 002ch 0001h number of erase block regions within device 1 = uniform device, 2 = boot device (sa) + 002dh 00xxh erase block region 1 information (ref er to jedec jesd68-01 or jep137 specifications) 00ffh, 0007h, 0000h, 0002h = 2 gb (sa) + 002eh 000xh (sa) + 002fh 0000h (sa) + 0030h 000xh (sa) + 0031h 0000h erase block region 2 information (refer to cfi publication 100) (sa) + 0032h 0000h (sa) + 0033h 0000h (sa) + 0034h 0000h (sa) + 0035h 0000h erase block region 3 information (refer to cfi publication 100) (sa) + 0036h 0000h (sa) + 0037h 0000h (sa) + 0038h 0000h
document number: 001-98296 rev. *j page 16 of 19 S70GL02GS (sa) + 0039h 0000h erase block region 4 information (refer to cfi publication 100) (sa) + 003ah 0000h (sa) + 003bh 0000h (sa) + 003ch 0000h table 10. cfi primary vendor-specific extended query word address data description (sa) + 0040h 0050h query-unique ascii string ?pri? (sa) + 0041h 0052h (sa) + 0042h 0049h (sa) + 0043h 0031h major version number, ascii (sa) + 0044h 0035h minor version number, ascii (sa) + 0045h 001ch address sensitive unlock (bits 1-0) 00b = required 01b = not required process technology (bits 5-2) 0000b = 0.23 m floating gate 0001b = 0.17 m floating gate 0010b = 0.23 m mirrorbit 0011b = 0.13 m floating gate 0100b = 0.11 m mirrorbit 0101b = 0.09 m floating gate 0110b = 0.09 m mirrorbit 0111b = 0.065 m mirrorbit eclipse 1000b = 0.065 m mirrorbit 1001b = 0.045 m mirrorbit (sa) + 0046h 0002h erase suspend 0 = not supported 1 = read only 2 = read and write (sa) + 0047h 0001h sector protect 00 = not supported x = number of sectors in smallest group (sa) + 0048h 0000h temporary sector unprotect 00 = not supported 01 = supported (sa) + 0049h 0008h sector protect/unprotect scheme 04 = high voltage method 05 = software command locking method 08 = advanced sector protection method (sa) + 004ah 0000h simultaneous operation 00 = not supported x = number of banks (sa) + 004bh 0000h burst mode type 00 = not supported 01 = supported (sa) + 004ch 0003h page mode type 00 = not supported 01 = 4 word page 02 = 8 word page 03=16 word page (sa) + 004dh 0000h acc (acceleration) supply minimum 00 = not supported d7-d4: volt d3-d0: 100 mv table 9. cfi device geometry definition (continued) word address data description
document number: 001-98296 rev. *j page 17 of 19 S70GL02GS (sa) + 004eh 0000h acc (acceleration) supply maximum 00 = not supported d7-d4: volt d3-d0: 100 mv (sa) + 004fh 0004h (bottom) 0005h (top) wp# protection 00h = flash device without wp protect (no boot) 01h = eight 8 kb sectors at top and bottom with wp (dual boot) 02h = bottom boot device with wp protect (bottom boot) 03h = top boot device with wp protect (top boot) 04h = uniform, bottom wp protect (uniform bottom boot) 05h = uniform, top wp protect (uniform top boot) 06h = wp protect for all sectors 07h = uniform, top or bottom wp protect (sa) + 0050h 0001h program suspend 00 = not supported 01 = supported (sa) +0051h 0000h unlock bypass 00 = not supported 01 =supported (sa) + 0052h 0009h secured silicon sector (customer otp area) size 2 n (bytes) (sa) + 0053h 008fh software features bit 0: status register polling (1 = supported, 0 = not supported) bit 1: dq polling (1 = supported, 0 = not supported) bit 2: new program suspend/resume commands (1 = supported, 0 = not supported) bit 3: word programming (1 = supported, 0 = not supported) bit 4: bit-field programming (1 = supported, 0 = not supported) bit 5: autodetect programming (1 = supported, 0 = not supported) bit 6: rfu bit 7: multiple writes per line (1 = supported, 0 = not supported) (sa) + 0054h 0005h page size = 2 n bytes (sa) + 0055h 0006h erase suspend timeout maximum < 2 n (s) (sa) + 0056h 0006h program suspend timeout maximum < 2 n (s) (sa) + 0078h 0006h embedded hardware reset timeout maximum < 2 n (s) reset with reset pin (sa) + 0079h 0009h non-embedded hardware reset timeout maximum < 2 n (s) power on reset table 10. cfi primary vendor-specific extended query (continued) word address data description
document number: 001-98296 rev. *j page 18 of 19 S70GL02GS 10. document history document title: S70GL02GS, 2 gbit (256 mbytes), 3.0 v flash memory document number: 001-98296 rev. ecn no. orig. of change submission date description of change ** ? bwha 05/19/2011 spansion publication number: s70gl-s_00 initial release *a ? bwha 07/08/2011 performance characteristics: updated typical program and erase rates ordering information: updated model number description of v1 and v2 dc characteristics: modified note 3 *b ? bwha 09/23/2011 distinctive characteristics: cosmetic changes ordering information: updated cfi device geometry definition: data at (sa) + 002eh modified *c ? bwha 12/15/2011 global: data sheet designation changed fr om preliminary to full production performance characteristics: updated sector erase time figure: 64-ball fortified ball grid array: added notes bga package capacitance: updated *d ? bwha 06/27/2014 global: added ?40c to +105c temperature range *e 4871480 bwha 08/13/2015 updated to cypress template *f 5157725 tocu 03/04/2016 general description: updated cypress document number as ?001-98285? in the table. distinctive characteristics: updated link to s29gl01gs datasheet. updated to new template. *g 5343030 tocu 07/08/2016 updated document title to read as ?s 70gl02gs 2 gbit (256 mbytes), 3.0 v flash memory?. updated to new template. *h 5755394 nibk 05/31/2017 updated cypress logo and copyright. *i 5774339 nfb 06/15/2017 updated ordering information . *j 5848474 prit 08/09/2017 added section second die access updated device number/description
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